KFJ4B01120L

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Nuvoton Technology Corporation

MOSFET P-CH 12V

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Nuvoton Technology Corporation

MOSFET P-CH 12V

Technical Specifications

Parameters and characteristics for this part

Specification	KFJ4B01120L

Current - Continuous Drain (Id) @ 25°C	2.6 A
Drain to Source Voltage (Vdss)	12 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	10.7 nC
Grade	Automotive
Mounting Type	Surface Mount
Operating Temperature [Max]	85 °C
Operating Temperature [Min]	-40 °C
Package / Case	4-XFLGA, CSP
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs [Max]	51 mOhm
Supplier Device Package	4-CSP (1x1)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max) @ Id [Max]	1 V

Part	Mounting Type	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Technology	Rds On (Max) @ Id, Vgs [Max]	Vgs(th) (Max) @ Id [Max]	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Grade	Package / Case	Qualification	FET Type	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Max]	Operating Temperature [Min]
Nuvoton Technology Corporation KFJ4B01120L	Surface Mount	4-CSP (1x1)	1.5 V 4.5 V	MOSFET (Metal Oxide)	51 mOhm	1 V	10.7 nC	8 V	Automotive	4-XFLGA CSP	AEC-Q101	P-Channel	12 V	2.6 A	85 °C	-40 °C
Nuvoton Technology Corporation KFJ4B01110L

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General part information

P-Channel 12 V 2.6A (Ta) 370mW (Ta) Surface Mount 4-CSP (1x1)

Technical documentation and resources