1N5061 TR PBFREE

Obsolete

Central Semiconductor Corp

DIODE GEN PURP 600V 1A GPR-1A

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Obsolete

Central Semiconductor Corp

DIODE GEN PURP 600V 1A GPR-1A

Technical Specifications

Parameters and characteristics for this part

Specification	1N5061 TR PBFREE

Capacitance @ Vr, F	15 pF
Current - Average Rectified (Io)	1 A
Current - Reverse Leakage @ Vr	5 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-65 C
Package / Case	R-1, Axial
Speed	Standard Recovery >500ns
Speed	200 mA
Supplier Device Package	GPR-1A
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	600 V
Voltage - Forward (Vf) (Max) @ If	1.2 V

Part	Mounting Type	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Package / Case	Technology	Capacitance @ Vr, F	Current - Average Rectified (Io)	Speed	Speed	Voltage - Forward (Vf) (Max) @ If	Voltage - DC Reverse (Vr) (Max) [Max]	Supplier Device Package	Current - Reverse Leakage @ Vr
Central Semiconductor Corp 1N5061 TR PBFREE	Through Hole	175 ░C	-65 C	R-1 Axial	Standard	15 pF	1 A	Standard Recovery >500ns	200 mA	1.2 V	600 V	GPR-1A	5 µA

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode 600 V 1A Through Hole GPR-1A

Technical documentation and resources