6A100GH

NRND

Taiwan Semiconductor Corporation

DIODE GEN PURP 1KV 6A R-6

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NRND

Taiwan Semiconductor Corporation

DIODE GEN PURP 1KV 6A R-6

Technical Specifications

Parameters and characteristics for this part

Specification	6A100GH

Capacitance @ Vr, F	60 pF
Current - Average Rectified (Io)	6 A
Current - Reverse Leakage @ Vr	10 çA
Grade	Automotive
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	R-6, Axial
Qualification	AEC-Q101
Speed	Standard Recovery >500ns
Speed	200 mA
Supplier Device Package	R-6
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	1000 V
Voltage - Forward (Vf) (Max) @ If	1 V

Part	Voltage - Forward (Vf) (Max) @ If	Speed	Speed	Current - Reverse Leakage @ Vr	Package / Case	Voltage - DC Reverse (Vr) (Max) [Max]	Current - Average Rectified (Io)	Capacitance @ Vr, F	Supplier Device Package	Mounting Type	Qualification	Grade	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Technology
Taiwan Semiconductor Corporation 6A100GH	1 V	Standard Recovery >500ns	200 mA	10 çA	R-6 Axial	1000 V	6 A	60 pF	R-6	Through Hole	AEC-Q101	Automotive	150 °C	-55 °C	Standard
Taiwan Semiconductor Corporation 6A100G	1 V	Standard Recovery >500ns	200 mA	10 çA	R-6 Axial	1000 V	6 A	60 pF	R-6	Through Hole			150 °C	-55 °C	Standard

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 1000 V 6A Through Hole R-6

Technical documentation and resources