6N139(F)

Obsolete

Toshiba Semiconductor and Storage

OPTOISO 2.5KV DARL W/BASE 8DIP

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Obsolete

Toshiba Semiconductor and Storage

OPTOISO 2.5KV DARL W/BASE 8DIP

Technical Specifications

Parameters and characteristics for this part

Specification	6N139(F)

Current - DC Forward (If) (Max) [Max]	20 mA
Current - Output / Channel	60 mA
Current Transfer Ratio (Min) [Min]	500 %
Input Type	DC
Mounting Type	Through Hole
Number of Channels	1
Operating Temperature [Max]	70 °C
Operating Temperature [Min]	0 °C
Output Type	Darlington with Base
Package / Case	0.3 in
Package / Case	8-DIP
Package / Case	7.62 mm
Supplier Device Package	8-DIP
Turn On / Turn Off Time (Typ)	1 µs, 200 ns
Voltage - Forward (Vf) (Typ)	1.65 V
Voltage - Isolation	2500 Vrms
Voltage - Output (Max) [Max]	18 V

Part	Number of Channels	Current Transfer Ratio (Min) [Min]	Package / Case	Package / Case	Package / Case	Voltage - Output (Max) [Max]	Operating Temperature [Max]	Operating Temperature [Min]	Supplier Device Package	Voltage - Isolation	Turn On / Turn Off Time (Typ)	Voltage - Forward (Vf) (Typ)	Mounting Type	Output Type	Current - Output / Channel	Input Type	Current - DC Forward (If) (Max) [Max]
Toshiba Semiconductor and Storage 6N139(F)	1	500 %	0.3 in	8-DIP	7.62 mm	18 V	70 °C	0 °C	8-DIP	2500 Vrms	1 µs 200 ns	1.65 V	Through Hole	Darlington with Base	60 mA	DC	20 mA

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Optoisolator Darlington with Base Output 2500Vrms 1 Channel 8-DIP

Technical documentation and resources

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