LS352 TO-78 6L

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Linear Integrated Systems, Inc.

TIGHTLY MATCHED, MONOLITHIC DUAL

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Linear Integrated Systems, Inc.

TIGHTLY MATCHED, MONOLITHIC DUAL

Technical Specifications

Parameters and characteristics for this part

Specification	LS352 TO-78 6L

Current - Collector (Ic) (Max) [Max]	10 mA
Current - Collector Cutoff (Max) [Max]	200 pA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	200
Frequency - Transition	200 MHz
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-78-6 Metal Can
Power - Max [Max]	500 mW
Supplier Device Package	TO-78-6
Transistor Type	2 PNP (Dual)
Vce Saturation (Max) @ Ib, Ic	500 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	60 V

Part	Power - Max [Max]	Frequency - Transition	Vce Saturation (Max) @ Ib, Ic	Operating Temperature	Supplier Device Package	Transistor Type	Mounting Type	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Package / Case	Package / Case [y]	Package / Case [x]	Current - Collector Cutoff (Max) [Max]	Current - Collector (Ic) (Max) [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]
Linear Integrated Systems, Inc. LS352 SOIC 8L ROHS	500 mW	200 MHz	500 mV	150 °C	8-SOIC	2 PNP (Dual)	Surface Mount	200	8-SOIC	3.9 mm	0.154 in	200 pA	10 mA	60 V
Linear Integrated Systems, Inc. LS352 TO-78 6L	500 mW	200 MHz	500 mV	150 °C	TO-78-6	2 PNP (Dual)	Through Hole	200	TO-78-6 Metal Can			200 pA	10 mA	60 V
Linear Integrated Systems, Inc. LS352 SOT-23 6L	500 mW	200 MHz	500 mV	150 °C	SOT-23-6	2 PNP (Dual)	Surface Mount	200	SOT-23-6			200 pA	10 mA	60 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Bipolar (BJT) Transistor Array 2 PNP (Dual) 60V 10mA 200MHz 500mW Through Hole TO-78-6

Technical documentation and resources