BYV430J-600PQ

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WeEn Semiconductors Co., Ltd

DIODE ARRAY GP 600V 30A TO3P

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WeEn Semiconductors Co., Ltd

DIODE ARRAY GP 600V 30A TO3P

Technical Specifications

Parameters and characteristics for this part

Specification	BYV430J-600PQ

Current - Average Rectified (Io) (per Diode)	30 A
Current - Reverse Leakage @ Vr	10 µA
Diode Configuration	1 Pair Common Cathode
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 °C
Package / Case	SC-65-3, TO-3P-3
Reverse Recovery Time (trr)	90 ns
Speed	200 mA, 500 ns
Supplier Device Package	TO-3P
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	600 V
Voltage - Forward (Vf) (Max) @ If	2 V

Part	Mounting Type	Supplier Device Package	Current - Average Rectified (Io) (per Diode)	Package / Case	Voltage - DC Reverse (Vr) (Max) [Max]	Diode Configuration	Reverse Recovery Time (trr)	Technology	Voltage - Forward (Vf) (Max) @ If	Speed	Operating Temperature - Junction [Max]	Current - Reverse Leakage @ Vr
WeEn Semiconductors Co., Ltd BYV430J-600PQ	Through Hole	TO-3P	30 A	SC-65-3 TO-3P-3	600 V	1 Pair Common Cathode	90 ns	Standard	2 V	200 mA 500 ns	175 °C	10 µA
WeEn Semiconductors Co., Ltd BYV430K-300PQ	Through Hole	TO-3P	30 A	SC-65-3 TO-3P-3	300 V	1 Pair Common Cathode	55 ns	Standard	1.25 V	200 mA 500 ns	175 °C	10 µA
WeEn Semiconductors Co., Ltd BYV430W-600PQ	Through Hole	TO-247-3	60 A	TO-247-3	600 V	1 Pair Common Cathode	90 ns	Standard	2 V	200 mA 500 ns	175 °C	10 µA

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode Array 1 Pair Common Cathode 600 V 30A Through Hole TO-3P-3, SC-65-3

Technical documentation and resources

No documents available