PJQ1820_R1_00001

NRND

Panjit International Inc.

MOSFET 2N-CH 20V 0.8A 6DFN

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NRND

Panjit International Inc.

MOSFET 2N-CH 20V 0.8A 6DFN

Technical Specifications

Parameters and characteristics for this part

Specification	PJQ1820_R1_00001

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	800 mA
Drain to Source Voltage (Vdss)	20 V
Gate Charge (Qg) (Max) @ Vgs	1.1 nC
Input Capacitance (Ciss) (Max) @ Vds	46 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	6-UFDFN
Rds On (Max) @ Id, Vgs	300 mOhm
Supplier Device Package	DFN1010-6L
Vgs(th) (Max) @ Id	1 V

Part	Configuration	Package / Case	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs	Supplier Device Package	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C
Panjit International Inc. PJQ1820_R1_00001	2 N-Channel (Dual)	6-UFDFN	300 mOhm	1 V	46 pF	1.1 nC	DFN1010-6L	Surface Mount	-55 °C	150 °C	20 V	800 mA

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General part information

Mosfet Array 20V 800mA (Ta) 400mW (Ta) Surface Mount DFN1010-6L

Technical documentation and resources

No documents available