AOI8N25

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Alpha & Omega Semiconductor Inc.

MOSFET N-CH 250V 8A TO251A

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Alpha & Omega Semiconductor Inc.

MOSFET N-CH 250V 8A TO251A

Technical Specifications

Parameters and characteristics for this part

Specification	AOI8N25

Current - Continuous Drain (Id) @ 25°C	8 A
Drain to Source Voltage (Vdss)	250 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	7.2 nC
Input Capacitance (Ciss) (Max) @ Vds	306 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-251-3 Stub Leads, IPAK
Power Dissipation (Max)	78 W
Rds On (Max) @ Id, Vgs	560 mOhm
Supplier Device Package	TO-251A
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4.3 V

Part	Vgs (Max)	Power Dissipation (Max)	Mounting Type	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Technology	FET Type	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs [Max]	Supplier Device Package
Alpha & Omega Semiconductor Inc. AOI8N25	30 V	78 W	Through Hole	560 mOhm	8 A	10 V	TO-251-3 Stub Leads IPAK	-55 °C	150 °C	MOSFET (Metal Oxide)	N-Channel	4.3 V	306 pF	250 V	7.2 nC	TO-251A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	3500	$ 0.39