UPS5819E3/TR7

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Microsemi Corporation

DIODE SCHOTTKY 40V 1A POWERMITE1

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Microsemi Corporation

DIODE SCHOTTKY 40V 1A POWERMITE1

Technical Specifications

Parameters and characteristics for this part

Specification	UPS5819E3/TR7

Capacitance @ Vr, F	60 pF
Current - Average Rectified (Io)	1 A
Current - Reverse Leakage @ Vr	1 mA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	DO-216AA
Speed	200 mA, 500 ns
Supplier Device Package	Powermite 1 (DO216-AA)
Technology	Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	40 V
Voltage - Forward (Vf) (Max) @ If	550 mV

Part	Package / Case	Mounting Type	Capacitance @ Vr, F	Speed	Voltage - Forward (Vf) (Max) @ If	Voltage - DC Reverse (Vr) (Max) [Max]	Current - Reverse Leakage @ Vr	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Current - Average Rectified (Io)	Technology	Supplier Device Package
Microsemi Corporation UPS5819E3/TR7	DO-216AA	Surface Mount	60 pF	200 mA 500 ns	550 mV	40 V	1 mA	150 °C	-55 °C	1 A	Schottky	Powermite 1 (DO216-AA)

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General part information

Diode 40 V 1A Surface Mount Powermite 1 (DO216-AA)

Technical documentation and resources

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