AOW418

Obsolete

Alpha & Omega Semiconductor Inc.

MOSFET N-CH 100V 9.5A/105A TO262

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Obsolete

Alpha & Omega Semiconductor Inc.

MOSFET N-CH 100V 9.5A/105A TO262

Technical Specifications

Parameters and characteristics for this part

Specification	AOW418

Current - Continuous Drain (Id) @ 25°C	9.5 A, 105 A
Drain to Source Voltage (Vdss)	100 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	83 nC
Input Capacitance (Ciss) (Max) @ Vds	5200 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-262AA, TO-262-3 Long Leads, I2PAK
Power Dissipation (Max)	2.1 W, 333 W
Rds On (Max) @ Id, Vgs	10 mOhm
Supplier Device Package	TO-262
Technology	MOSFET (Metal Oxide)
Vgs (Max)	25 V
Vgs(th) (Max) @ Id	3.9 V

Part	Vgs(th) (Max) @ Id	Vgs (Max)	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Technology	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	FET Type	Rds On (Max) @ Id, Vgs	Supplier Device Package	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]
Alpha & Omega Semiconductor Inc. AOW418	3.9 V	25 V	Through Hole	83 nC	100 V	2.1 W 333 W	MOSFET (Metal Oxide)	5200 pF	9.5 A 105 A	N-Channel	10 mOhm	TO-262	I2PAK TO-262-3 Long Leads TO-262AA	-55 °C	175 ░C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$