RN1118(T5L,F,T)

Obsolete

Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 50V 0.1A SSM

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Obsolete

Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 50V 0.1A SSM

Technical Specifications

Parameters and characteristics for this part

Specification	RN1118(T5L,F,T)

Current - Collector (Ic) (Max) [Max]	100 mA
Current - Collector Cutoff (Max) [Max]	500 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	50
Frequency - Transition	250 MHz
Mounting Type	Surface Mount
Package / Case	SC-75, SOT-416
Power - Max [Max]	100 mW
Resistor - Base (R1)	47 kOhms
Resistor - Emitter Base (R2)	10 kOhms
Supplier Device Package	SSM
Transistor Type	NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic	300 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	50 V

Part	Resistor - Emitter Base (R2)	Frequency - Transition	Vce Saturation (Max) @ Ib, Ic	Resistor - Base (R1)	Current - Collector (Ic) (Max) [Max]	Transistor Type	Mounting Type	Power - Max [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Current - Collector Cutoff (Max) [Max]	Supplier Device Package	Voltage - Collector Emitter Breakdown (Max) [Max]	Package / Case
Toshiba Semiconductor and Storage RN1118(TE85L,F)	10 kOhms	250 MHz	300 mV	47 kOhms	100 mA	NPN - Pre-Biased	Surface Mount	100 mW	50	500 nA	SSM	50 V	SC-75 SOT-416
Toshiba Semiconductor and Storage RN1118MFV,L3F	10 kOhms	250 MHz	300 mV	47 kOhms	100 mA	NPN - Pre-Biased	Surface Mount	150 mW	50	500 nA	VESM	50 V	SOT-723
Toshiba Semiconductor and Storage RN1118(T5L,F,T)	10 kOhms	250 MHz	300 mV	47 kOhms	100 mA	NPN - Pre-Biased	Surface Mount	100 mW	50	500 nA	SSM	50 V	SC-75 SOT-416

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 250 MHz 100 mW Surface Mount SSM

Technical documentation and resources

No documents available