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BAS316,H3F - VLIN1616-02GHE3-08

BAS316,H3F

Active
Toshiba Semiconductor and Storage

DIODE GEN PURP 100V 250MA USC

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BAS316,H3F - VLIN1616-02GHE3-08

BAS316,H3F

Active
Toshiba Semiconductor and Storage

DIODE GEN PURP 100V 250MA USC

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationBAS316,H3F
Current - Average Rectified (Io)250 mA
Mounting TypeSurface Mount
Operating Temperature - Junction150 °C
Package / CaseSOD-323, SC-76
Speed200 mA, 500 ns
Supplier Device PackageUSC
TechnologyStandard
Voltage - DC Reverse (Vr) (Max) [Max]100 V
Voltage - Forward (Vf) (Max) @ If [Max]1.25 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.15
10$ 0.09
100$ 0.06
500$ 0.04
1000$ 0.04
Digi-Reel® 1$ 0.15
10$ 0.09
100$ 0.06
500$ 0.04
1000$ 0.04
Tape & Reel (TR) 3000$ 0.03
6000$ 0.03
9000$ 0.03
15000$ 0.02
21000$ 0.02
30000$ 0.02
75000$ 0.02
150000$ 0.02
300000$ 0.02

Description

General part information

BAS316 Series

Diode 100 V 250mA Surface Mount USC

Documents

Technical documentation and resources