PJS6403_S1_00001

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Panjit International Inc.

30V P-CHANNEL ENHANCEMENT MODE M

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Panjit International Inc.

30V P-CHANNEL ENHANCEMENT MODE M

Technical Specifications

Parameters and characteristics for this part

Specification	PJS6403_S1_00001

Current - Continuous Drain (Id) @ 25°C	6.4 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	7.8 nC
Input Capacitance (Ciss) (Max) @ Vds	870 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-23-6
Power Dissipation (Max) [Max]	2 W
Rds On (Max) @ Id, Vgs	32 mOhm
Supplier Device Package	SOT-23-6
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

Part	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Power Dissipation (Max) [Max]	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs [Max]	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Package / Case	Mounting Type	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	FET Type
Panjit International Inc. PJS6403_S1_00001	20 V	870 pF	30 V	2 W	6.4 A	4.5 V 10 V	7.8 nC	MOSFET (Metal Oxide)	-55 °C	150 °C	SOT-23-6	SOT-23-6	Surface Mount	32 mOhm	2.5 V	P-Channel

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General part information

P-Channel 30 V 6.4A (Ta) 2W (Ta) Surface Mount SOT-23-6

Technical documentation and resources