RRR015P03TL

NRND

Rohm Semiconductor

MOSFET P-CH 30V 1.5A TSMT3

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NRND

Rohm Semiconductor

MOSFET P-CH 30V 1.5A TSMT3

Technical Specifications

Parameters and characteristics for this part

Specification	RRR015P03TL

Current - Continuous Drain (Id) @ 25°C	1.5 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	4 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	10 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	6.5 nC
Input Capacitance (Ciss) (Max) @ Vds	230 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SC-96
Power Dissipation (Max) [Max]	540 mW
Rds On (Max) @ Id, Vgs	160 mΩ
Supplier Device Package	TSMT3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id [Max]	2.5 V

Part	Mounting Type	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id [Max]	Supplier Device Package	Technology	FET Type	Rds On (Max) @ Id, Vgs	Package / Case	Operating Temperature	Vgs (Max)	Drain to Source Voltage (Vdss)	Power Dissipation (Max) [Max]	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs
Rohm Semiconductor RRR015P03TL	Surface Mount	4 V	10 V	1.5 A	2.5 V	TSMT3	MOSFET (Metal Oxide)	P-Channel	160 mΩ	SC-96	150 °C	20 V	30 V	540 mW	230 pF	6.5 nC

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General part information

P-Channel 30 V 1.5A (Ta) 540mW (Ta) Surface Mount TSMT3

Technical documentation and resources