1N5625-TR

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Vishay General Semiconductor - Diodes Division

DIODE AVALANCHE 400V 3A SOD64

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Vishay General Semiconductor - Diodes Division

DIODE AVALANCHE 400V 3A SOD64

Technical Specifications

Parameters and characteristics for this part

Specification	1N5625-TR

Capacitance @ Vr, F	60 pF
Current - Average Rectified (Io)	3 A
Current - Reverse Leakage @ Vr	1 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 C
Package / Case	SOD-64, Axial
Reverse Recovery Time (trr)	3 çs
Speed	Standard Recovery >500ns
Speed	200 mA
Supplier Device Package	SOD-64
Technology	Avalanche
Voltage - DC Reverse (Vr) (Max) [Max]	400 V
Voltage - Forward (Vf) (Max) @ If	1 V

Part	Technology	Capacitance @ Vr, F	Voltage - Forward (Vf) (Max) @ If	Voltage - DC Reverse (Vr) (Max) [Max]	Package / Case	Current - Reverse Leakage @ Vr	Supplier Device Package	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Mounting Type	Current - Average Rectified (Io)	Reverse Recovery Time (trr)	Speed	Speed
Vishay General Semiconductor - Diodes Division 1N5625GP-E3/54	Standard	40 pF	1 V	400 V	DO-201AD Axial	5 µA	DO-201AD	175 ░C	-65 C	Through Hole	3 A	5 µs	Standard Recovery >500ns	200 mA
Vishay General Semiconductor - Diodes Division 1N5625-TR	Avalanche	60 pF	1 V	400 V	Axial SOD-64	1 µA	SOD-64	175 ░C	-55 C	Through Hole	3 A	3 çs	Standard Recovery >500ns	200 mA

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General part information

Diode 400 V 3A Through Hole SOD-64

Technical documentation and resources