GA05JT03-46

Obsolete

GeneSiC Semiconductor

TRANS SJT 300V 9A TO46

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Obsolete

GeneSiC Semiconductor

TRANS SJT 300V 9A TO46

Technical Specifications

Parameters and characteristics for this part

Specification	GA05JT03-46

Current - Continuous Drain (Id) @ 25°C	9 A
Drain to Source Voltage (Vdss)	300 V
Mounting Type	Through Hole
Operating Temperature [Max]	225 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-46-3
Power Dissipation (Max)	20 W
Rds On (Max) @ Id, Vgs [Max]	240 mOhm
Supplier Device Package	TO-46
Technology	SiC (Silicon Carbide Junction Transistor)

Part	Mounting Type	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Technology	Current - Continuous Drain (Id) @ 25°C	Package / Case	Rds On (Max) @ Id, Vgs [Max]
GeneSiC Semiconductor GA05JT03-46	Through Hole	TO-46	-55 °C	225 °C	20 W	300 V	SiC (Silicon Carbide Junction Transistor)	9 A	TO-46-3	240 mOhm

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

300 V 9A (Tc) 20W (Tc) Through Hole TO-46

Technical documentation and resources