AOI444

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Alpha & Omega Semiconductor Inc.

MOSFET N-CH 60V 4A/12A TO251A

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Alpha & Omega Semiconductor Inc.

MOSFET N-CH 60V 4A/12A TO251A

Technical Specifications

Parameters and characteristics for this part

Specification	AOI444

Current - Continuous Drain (Id) @ 25°C	4 A, 12 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	10 nC
Input Capacitance (Ciss) (Max) @ Vds	540 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-251-3 Stub Leads, IPAK
Power Dissipation (Max)	2.1 W, 20 W
Rds On (Max) @ Id, Vgs [Max]	60 mOhm
Supplier Device Package	TO-251A
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3 V

Part	FET Type	Current - Continuous Drain (Id) @ 25°C	Technology	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Power Dissipation (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Vgs(th) (Max) @ Id	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs [Max]
Alpha & Omega Semiconductor Inc. AOI442	N-Channel	7 A 37 A	MOSFET (Metal Oxide)	60 V	20 mOhm	20 V	2300 pF	TO-251A	2.1 W 60 W	-55 °C	175 ░C	TO-251-3 Stub Leads IPAK	2.7 V	Through Hole	4.5 V 10 V	68 nC
Alpha & Omega Semiconductor Inc. AOI444	N-Channel	4 A 12 A	MOSFET (Metal Oxide)	60 V		20 V	540 pF	TO-251A	2.1 W 20 W	-55 °C	175 ░C	TO-251-3 Stub Leads IPAK	3 V	Through Hole	4.5 V 10 V	10 nC	60 mOhm

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	3500	$ 0.23