DB106G

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GeneSiC Semiconductor

BRIDGE RECT 1PHASE 800V 1A DB

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GeneSiC Semiconductor

BRIDGE RECT 1PHASE 800V 1A DB

Technical Specifications

Parameters and characteristics for this part

Specification	DB106G

Current - Average Rectified (Io)	1 A
Current - Reverse Leakage @ Vr	10 µA
Diode Type	Single Phase
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	4-EDIP
Package / Case	0.321 in
Package / Case	8.15 mm
Supplier Device Package	DB
Technology	Standard
Voltage - Forward (Vf) (Max) @ If	1.1 V
Voltage - Peak Reverse (Max) [Max]	800 V

Part	Current - Reverse Leakage @ Vr	Current - Average Rectified (Io)	Diode Type	Supplier Device Package	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Voltage - Peak Reverse (Max) [Max]	Package / Case	Package / Case	Package / Case	Voltage - Forward (Vf) (Max) @ If
GeneSiC Semiconductor DB106G	10 µA	1 A	Single Phase	DB	Standard	-55 °C	150 °C	Through Hole	800 V	4-EDIP	0.321 in	8.15 mm	1.1 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	20000	$ 0.17

General part information

Bridge Rectifier Single Phase Standard 800 V Through Hole DB

Technical documentation and resources