2SC4935-Y,Q(J

Obsolete

Toshiba Semiconductor and Storage

TRANS NPN 50V 3A TO220NIS

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Obsolete

Toshiba Semiconductor and Storage

TRANS NPN 50V 3A TO220NIS

Technical Specifications

Parameters and characteristics for this part

Specification	2SC4935-Y,Q(J

Current - Collector (Ic) (Max) [Max]	3 A
Current - Collector Cutoff (Max) [Max]	1 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	70
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-220-3 Full Pack
Power - Max [Max]	2 W
Supplier Device Package	TO-220NIS
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic [Max]	600 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	50 V

Part	Power - Max [Max]	Vce Saturation (Max) @ Ib, Ic [Max]	Current - Collector Cutoff (Max) [Max]	Transistor Type	Mounting Type	Package / Case	Operating Temperature	Voltage - Collector Emitter Breakdown (Max) [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Supplier Device Package	Current - Collector (Ic) (Max) [Max]
Toshiba Semiconductor and Storage 2SC4935-Y,Q(J	2 W	600 mV	1 µA	NPN	Through Hole	TO-220-3 Full Pack	150 °C	50 V	70	TO-220NIS	3 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Bipolar (BJT) Transistor NPN 50 V 3 A 80MHz 2 W Through Hole TO-220NIS

Technical documentation and resources