MPQ2907A PBFREE

Obsolete

Central Semiconductor Corp

TRANS 4PNP 60V 0.6A

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Obsolete

Central Semiconductor Corp

TRANS 4PNP 60V 0.6A

Technical Specifications

Parameters and characteristics for this part

Specification	MPQ2907A PBFREE

Current - Collector (Ic) (Max) [Max]	600 mA
Current - Collector Cutoff (Max) [Max]	50 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	50 hFE
Frequency - Transition	200 MHz
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-65 °C
Package / Case	14-DIP
Package / Case [x]	0.3 "
Package / Case [y]	7.62 mm
Power - Max [Max]	650 mW
Supplier Device Package	TO-116
Transistor Type	4 PNP (Quad)
Voltage - Collector Emitter Breakdown (Max) [Max]	60 V

Part	Transistor Type	Current - Collector (Ic) (Max) [Max]	Current - Collector Cutoff (Max) [Max]	Package / Case	Package / Case [y]	Package / Case [x]	Supplier Device Package	Voltage - Collector Emitter Breakdown (Max) [Max]	Frequency - Transition	Power - Max [Max]	Operating Temperature [Max]	Operating Temperature [Min]	Mounting Type	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]
Central Semiconductor Corp MPQ2907A PBFREE	4 PNP (Quad)	600 mA	50 nA	14-DIP	7.62 mm	0.3 "	TO-116	60 V	200 MHz	650 mW	150 °C	-65 °C	Through Hole	50 hFE

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Bipolar (BJT) Transistor Array 4 PNP (Quad) 60V 600mA 200MHz 650mW Through Hole TO-116

Technical documentation and resources