VS-2EGH01-M3/5BT

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Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 100V 2A DO214AA

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Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 100V 2A DO214AA

Technical Specifications

Parameters and characteristics for this part

Specification	VS-2EGH01-M3/5BT

Current - Average Rectified (Io)	2 A
Current - Reverse Leakage @ Vr	2 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 C
Package / Case	SMB, DO-214AA
Reverse Recovery Time (trr)	23 ns
Speed	200 mA, 500 ns
Supplier Device Package	DO-214AA (SMBJ)
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	100 V
Voltage - Forward (Vf) (Max) @ If	900 mV

Part	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max) [Max]	Mounting Type	Reverse Recovery Time (trr)	Package / Case	Supplier Device Package	Speed	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Technology	Voltage - Forward (Vf) (Max) @ If	Current - Average Rectified (Io)
Vishay General Semiconductor - Diodes Division VS-2EGH01-M3/5BT	2 µA	100 V	Surface Mount	23 ns	DO-214AA SMB	DO-214AA (SMBJ)	200 mA 500 ns	175 ░C	-55 C	Standard	900 mV	2 A

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General part information

Diode 100 V 2A Surface Mount DO-214AA (SMBJ)

Technical documentation and resources