BYC10B-600,118

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WeEn Semiconductors Co., Ltd

DIODE GEN PURP 500V 10A D2PAK

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WeEn Semiconductors Co., Ltd

DIODE GEN PURP 500V 10A D2PAK

Technical Specifications

Parameters and characteristics for this part

Specification	BYC10B-600,118

Current - Average Rectified (Io)	10 A
Current - Reverse Leakage @ Vr	200 µA
Mounting Type	Surface Mount
Operating Temperature - Junction	150 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Reverse Recovery Time (trr)	55 ns
Speed	200 mA, 500 ns
Supplier Device Package	D2PAK
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	500 V
Voltage - Forward (Vf) (Max) @ If	2.9 V

Part	Supplier Device Package	Current - Average Rectified (Io)	Voltage - DC Reverse (Vr) (Max) [Max]	Operating Temperature - Junction	Mounting Type	Reverse Recovery Time (trr)	Speed	Technology	Current - Reverse Leakage @ Vr	Voltage - Forward (Vf) (Max) @ If	Package / Case
WeEn Semiconductors Co., Ltd BYC10X-600,127	TO-220FP	10 A	500 V	150 °C	Through Hole	55 ns	200 mA 500 ns	Standard	200 µA	2.9 V	TO-220-2 Full Pack Isolated Tab
WeEn Semiconductors Co., Ltd BYC10-600,127	TO-220AC	10 A	500 V	150 °C	Through Hole	55 ns	200 mA 500 ns	Standard	200 µA	2.9 V	TO-220-2
WeEn Semiconductors Co., Ltd BYC10D-600,127	TO-220AC	10 A	500 V	150 °C	Through Hole	18 ns	200 mA 500 ns	Standard	200 µA	2.5 V	TO-220-2
WeEn Semiconductors Co., Ltd BYC10-600PQ	TO-220AC	10 A	600 V	150 °C	Through Hole	19 ns	200 mA 500 ns	Standard		1.8 V	TO-220-2
WeEn Semiconductors Co., Ltd BYC10DX-600,127	TO-220FP	10 A	500 V	150 °C	Through Hole	18 ns	200 mA 500 ns	Standard	200 µA	2.5 V	TO-220-2 Full Pack Isolated Tab
WeEn Semiconductors Co., Ltd BYC10B-600,118	D2PAK	10 A	500 V	150 °C	Surface Mount	55 ns	200 mA 500 ns	Standard	200 µA	2.9 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB

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General part information

Diode 500 V 10A Surface Mount D2PAK

Technical documentation and resources

No documents available