BCR08PN

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Diotec Semiconductor

BIASED BJT SOT363 NPN+PNP 2.2K

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Diotec Semiconductor

BIASED BJT SOT363 NPN+PNP 2.2K

Technical Specifications

Parameters and characteristics for this part

Specification	BCR08PN

Current - Collector (Ic) (Max) [Max]	100 mA
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	70
Frequency - Transition	170 MHz
Mounting Type	Surface Mount
Package / Case	6-VSSOP, SC-88, SOT-363
Power - Max [Max]	250 mW
Resistor - Base (R1)	2.2 kOhm
Resistor - Emitter Base (R2)	47000 Ohms
Supplier Device Package	SOT-363
Vce Saturation (Max) @ Ib, Ic	300 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	60 V

Part	Frequency - Transition	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Transistor Type	Voltage - Collector Emitter Breakdown (Max) [Max]	Supplier Device Package	Power - Max [Max]	Vce Saturation (Max) @ Ib, Ic	Current - Collector (Ic) (Max) [Max]	Grade	Resistor - Base (R1)	Package / Case	Current - Collector Cutoff (Max) [Max]	Qualification	Mounting Type	Resistor - Emitter Base (R2)
Diotec Semiconductor BCR08PN-AQ	170 MHz	70	1 NPN - Pre-Biased 1 PNP	50 V	SOT-363	250 mW	300 mV	100 mA	Automotive	2.2 kOhm	6-VSSOP SC-88 SOT-363	100 nA	AEC-Q101	Surface Mount
Diotec Semiconductor BCR08PN	170 MHz	70		60 V	SOT-363	250 mW	300 mV	100 mA		2.2 kOhm	6-VSSOP SC-88 SOT-363	100 nA		Surface Mount	47000 Ohms

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General part information

Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased 60V 100mA 170MHz 250mW Surface Mount SOT-363

Technical documentation and resources