MUR860J

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WeEn Semiconductors Co., Ltd

DIODE GEN PURP 600V 8A SMC

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WeEn Semiconductors Co., Ltd

DIODE GEN PURP 600V 8A SMC

Technical Specifications

Parameters and characteristics for this part

Specification	MUR860J

Current - Average Rectified (Io)	8 A
Current - Reverse Leakage @ Vr	10 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	175 °C
Package / Case	SMC, DO-214AB
Reverse Recovery Time (trr)	90 ns
Speed	200 mA, 500 ns
Supplier Device Package	SMC
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	600 V
Voltage - Forward (Vf) (Max) @ If	1.25 V

Part	Package / Case	Technology	Voltage - Forward (Vf) (Max) @ If	Reverse Recovery Time (trr)	Supplier Device Package	Mounting Type	Speed	Current - Average Rectified (Io)	Operating Temperature - Junction [Max]	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max) [Max]
WeEn Semiconductors Co., Ltd MUR860J	DO-214AB SMC	Standard	1.25 V	90 ns	SMC	Surface Mount	200 mA 500 ns	8 A	175 °C	10 µA	600 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 600 V 8A Surface Mount SMC

Technical documentation and resources

No documents available