VS-30ETS12S2LHM3

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Vishay General Semiconductor - Diodes Division

NEW INPUT DIODES - D2PAK

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Active

Vishay General Semiconductor - Diodes Division

NEW INPUT DIODES - D2PAK

Technical Specifications

Parameters and characteristics for this part

Specification	VS-30ETS12S2LHM3

Current - Average Rectified (Io)	30 A
Current - Reverse Leakage @ Vr	100 µA
Grade	Automotive
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-40 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Qualification	AEC-Q101
Speed	Standard Recovery >500ns
Speed	200 mA
Supplier Device Package	TO-263AB (D2PAK)
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	1.2 kV
Voltage - Forward (Vf) (Max) @ If [Max]	1.2 V

Part	Operating Temperature - Junction [Min]	Operating Temperature - Junction [Max]	Speed	Speed	Supplier Device Package	Mounting Type	Current - Average Rectified (Io)	Current - Reverse Leakage @ Vr	Voltage - Forward (Vf) (Max) @ If [Max]	Technology	Package / Case	Voltage - DC Reverse (Vr) (Max) [Max]	Qualification	Grade
Vishay General Semiconductor - Diodes Division VS-30ETS12S2L-M3	-40 °C	175 ░C	Standard Recovery >500ns	200 mA	TO-263AB (D2PAK)	Surface Mount	30 A	100 µA	1.2 V	Standard	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	1.2 kV
Vishay General Semiconductor - Diodes Division VS-30ETS12S2LHM3	-40 °C	175 ░C	Standard Recovery >500ns	200 mA	TO-263AB (D2PAK)	Surface Mount	30 A	100 µA	1.2 V	Standard	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	1.2 kV	AEC-Q101	Automotive

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General part information

Diode 1200 V 30A Surface Mount TO-263AB (D2PAK)

Technical documentation and resources