CTLDM304P-M832DS TR

Obsolete

Central Semiconductor Corp

MOSFET 2P-CH 30V 4.2A TLM832DS

Search across all available documentation for this part.

Obsolete

Central Semiconductor Corp

MOSFET 2P-CH 30V 4.2A TLM832DS

Technical Specifications

Parameters and characteristics for this part

Specification	CTLDM304P-M832DS TR

Configuration	2 P-Channel
Current - Continuous Drain (Id) @ 25°C	4.2 A
Drain to Source Voltage (Vdss)	30 V
Gate Charge (Qg) (Max) @ Vgs [Max]	6.4 nC
Input Capacitance (Ciss) (Max) @ Vds	760 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-TDFN Exposed Pad
Power - Max [Max]	1.65 W
Rds On (Max) @ Id, Vgs	70 mOhm
Supplier Device Package	TLM832DS
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1.3 V

Part	Rds On (Max) @ Id, Vgs	Configuration	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Power - Max [Max]	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Supplier Device Package	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Package / Case
Central Semiconductor Corp CTLDM304P-M832DS TR	70 mOhm	2 P-Channel	4.2 A	30 V	1.65 W	1.3 V	760 pF	Surface Mount	TLM832DS	MOSFET (Metal Oxide)	-55 °C	150 °C	6.4 nC	8-TDFN Exposed Pad

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Mosfet Array 30V 4.2A 1.65W Surface Mount TLM832DS

Technical documentation and resources