AON4407

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Alpha & Omega Semiconductor Inc.

MOSFET P-CH 12V 9A 8DFN

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Alpha & Omega Semiconductor Inc.

MOSFET P-CH 12V 9A 8DFN

Technical Specifications

Parameters and characteristics for this part

Specification	AON4407

Current - Continuous Drain (Id) @ 25°C	9 A
Drain to Source Voltage (Vdss)	12 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	23 nC
Input Capacitance (Ciss) (Max) @ Vds	2100 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Power Dissipation (Max)	2.5 W
Rds On (Max) @ Id, Vgs	20 mOhm
Supplier Device Package	8-DFN (3x2)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max) @ Id	850 mV

Part	Technology	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Mounting Type	Vgs (Max)	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs [Max]	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs
Alpha & Omega Semiconductor Inc. AON4421	MOSFET (Metal Oxide)	30 V	1.8 V	Surface Mount	20 V	8-DFN (3x2)	1120 pF	8 A	26 mOhm	4.5 V 10 V	21 nC	P-Channel	-55 °C	150 °C	2.5 W
Alpha & Omega Semiconductor Inc. AON4407	MOSFET (Metal Oxide)	12 V	850 mV	Surface Mount	8 V	8-DFN (3x2)	2100 pF	9 A	20 mOhm	1.5 V 4.5 V		P-Channel	-55 °C	150 °C	2.5 W	23 nC

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