VS-1ENH02-M3/85A

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Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 200V 1A DO220AA

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Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 200V 1A DO220AA

Technical Specifications

Parameters and characteristics for this part

Specification	VS-1ENH02-M3/85A

Current - Average Rectified (Io)	1 A
Current - Reverse Leakage @ Vr	2 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 C
Package / Case	DO-220AA
Reverse Recovery Time (trr)	28 ns
Speed	200 mA, 500 ns
Supplier Device Package	DO-220AA (SMP)
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	200 V
Voltage - Forward (Vf) (Max) @ If	920 mV

Part	Speed	Technology	Mounting Type	Package / Case	Voltage - Forward (Vf) (Max) @ If	Current - Reverse Leakage @ Vr	Reverse Recovery Time (trr)	Current - Average Rectified (Io)	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Voltage - DC Reverse (Vr) (Max) [Max]	Supplier Device Package
Vishay General Semiconductor - Diodes Division VS-1ENH02-M3/85A	200 mA 500 ns	Standard	Surface Mount	DO-220AA	920 mV	2 µA	28 ns	1 A	175 ░C	-55 C	200 V	DO-220AA (SMP)

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General part information

Diode 200 V 1A Surface Mount DO-220AA (SMP)

Technical documentation and resources