MBRH20045R

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GeneSiC Semiconductor

DIODE SCHOTTKY REV 45V 200A D-67

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GeneSiC Semiconductor

DIODE SCHOTTKY REV 45V 200A D-67

Technical Specifications

Parameters and characteristics for this part

Specification	MBRH20045R

Current - Average Rectified (Io)	200 A
Current - Reverse Leakage @ Vr	1 mA
Mounting Type	Chassis Mount
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	D-67
Speed	200 mA, 500 ns
Supplier Device Package	D-67
Technology	Schottky, Reverse Polarity
Voltage - DC Reverse (Vr) (Max) [Max]	45 V
Voltage - Forward (Vf) (Max) @ If	700 mV

Part	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Technology	Supplier Device Package	Voltage - DC Reverse (Vr) (Max) [Max]	Speed	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Mounting Type	Current - Reverse Leakage @ Vr	Package / Case
GeneSiC Semiconductor MBRH20045R	150 °C	-55 °C	Reverse Polarity Schottky	D-67	45 V	200 mA 500 ns	200 A	700 mV	Chassis Mount	1 mA	D-67

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General part information

Diode 45 V 200A Chassis Mount D-67

Technical documentation and resources