TPCP8107,LF

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Toshiba Semiconductor and Storage

MOSFET P-CH 40V 8A PS-8

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Toshiba Semiconductor and Storage

MOSFET P-CH 40V 8A PS-8

Technical Specifications

Parameters and characteristics for this part

Specification	TPCP8107,LF

Current - Continuous Drain (Id) @ 25°C	8 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	6 V, 10 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	44.6 nC
Input Capacitance (Ciss) (Max) @ Vds	2160 pF
Mounting Type	Surface Mount
Operating Temperature	175 °C
Power Dissipation (Max)	1 W
Rds On (Max) @ Id, Vgs	18 mOhm
Supplier Device Package	PS-8
Technology	MOSFET (Metal Oxide)
Vgs (Max) [Max]	10 V
Vgs (Max) [Min]	-20 V
Vgs(th) (Max) @ Id	3 V

Part	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Mounting Type	Technology	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Vgs (Max) [Min]	Vgs (Max) [Max]	Operating Temperature	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs	FET Type	Drive Voltage (Max Rds On, Min Rds On)
Toshiba Semiconductor and Storage TPCP8107,LF	2160 pF	40 V	Surface Mount	MOSFET (Metal Oxide)	3 V	18 mOhm	8 A	1 W	-20 V	10 V	175 °C	PS-8	44.6 nC	P-Channel	6 V 10 V

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General part information

P-Channel 40 V 8A (Ta) 1W (Ta) Surface Mount PS-8

Technical documentation and resources