AON3816

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Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 20V 8DFN

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Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 20V 8DFN

Technical Specifications

Parameters and characteristics for this part

Specification	AON3816

Configuration	2 N-Channel (Dual) Common Drain
Drain to Source Voltage (Vdss)	20 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs	13 nC
Input Capacitance (Ciss) (Max) @ Vds	1100 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Power - Max [Max]	2.5 W
Rds On (Max) @ Id, Vgs	22 mOhm
Supplier Device Package	8-DFN (3x3)
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1.1 V

Part	Mounting Type	Technology	FET Feature	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs	Configuration	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Power - Max [Max]
Alpha & Omega Semiconductor Inc. AON3814	Surface Mount	MOSFET (Metal Oxide)	Logic Level Gate	13 nC	17 mOhm	2 N-Channel (Dual) Common Drain	1.1 V	1100 pF	8-DFN (3x3)	20 V	-55 °C	150 °C	2.5 W
Alpha & Omega Semiconductor Inc. AON3816	Surface Mount	MOSFET (Metal Oxide)	Logic Level Gate	13 nC	22 mOhm	2 N-Channel (Dual) Common Drain	1.1 V	1100 pF	8-DFN (3x3)	20 V	-55 °C	150 °C	2.5 W

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