SSR1N60BTM-WS

Obsolete

ON Semiconductor

MOSFET N-CH 600V 900MA DPAK

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Obsolete

ON Semiconductor

MOSFET N-CH 600V 900MA DPAK

Technical Specifications

Parameters and characteristics for this part

Specification	SSR1N60BTM-WS

Current - Continuous Drain (Id) @ 25°C	900 mA
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	7.7 nC
Input Capacitance (Ciss) (Max) @ Vds	215 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)	28 W, 2.5 W
Rds On (Max) @ Id, Vgs	12 Ohm
Supplier Device Package	TO-252AA
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4 V

Part	Vgs(th) (Max) @ Id	FET Type	Package / Case	Vgs (Max)	Technology	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max)	Mounting Type	Drain to Source Voltage (Vdss)	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C
ON Semiconductor SSR1N60BTM-WS	4 V	N-Channel	DPAK (2 Leads + Tab) SC-63 TO-252-3	30 V	MOSFET (Metal Oxide)	215 pF	7.7 nC	-55 °C	150 °C	2.5 W 28 W	Surface Mount	600 V	TO-252AA	10 V	12 Ohm	900 mA

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 600 V 900mA (Tc) 2.5W (Ta), 28W (Tc) Surface Mount TO-252AA

Technical documentation and resources