IRF644

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Harris Corporation

14A, 250V, 0.28 OHM, N-CHANNEL

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Harris Corporation

14A, 250V, 0.28 OHM, N-CHANNEL

Technical Specifications

Parameters and characteristics for this part

Specification	IRF644

Current - Continuous Drain (Id) @ 25°C	14 A
Drain to Source Voltage (Vdss)	250 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	68 nC
Input Capacitance (Ciss) (Max) @ Vds	1300 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max)	125 W
Rds On (Max) @ Id, Vgs	280 mOhm
Supplier Device Package	TO-220AB
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Power Dissipation (Max)	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Supplier Device Package	FET Type	Rds On (Max) @ Id, Vgs
Harris Corporation IRF644	TO-220-3	1300 pF	10 V	4 V	125 W	Through Hole	-55 °C	150 °C	MOSFET (Metal Oxide)	68 nC	20 V	14 A	250 V	TO-220AB	N-Channel	280 mOhm

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	151	$ 2.00

General part information

N-Channel 250 V 14A (Tc) 125W (Tc) Through Hole TO-220AB

Technical documentation and resources

No documents available