PJE8407_R1_00001

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Panjit International Inc.

20V P-CHANNEL ENHANCEMENT MODE M

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Panjit International Inc.

20V P-CHANNEL ENHANCEMENT MODE M

Technical Specifications

Parameters and characteristics for this part

Specification	PJE8407_R1_00001

Current - Continuous Drain (Id) @ 25°C	500 mA
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.2 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	1.4 nC
Input Capacitance (Ciss) (Max) @ Vds	38 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-523
Power Dissipation (Max) [Max]	300 mW
Rds On (Max) @ Id, Vgs	1.2 Ohm
Supplier Device Package	SOT-523
Technology	MOSFET (Metal Oxide)
Vgs (Max)	10 V
Vgs(th) (Max) @ Id	1 V

Part	Gate Charge (Qg) (Max) @ Vgs [Max]	Mounting Type	Vgs (Max)	Supplier Device Package	Rds On (Max) @ Id, Vgs	Technology	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Power Dissipation (Max) [Max]	Package / Case	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id
Panjit International Inc. PJE8407_R1_00001	1.4 nC	Surface Mount	10 V	SOT-523	1.2 Ohm	MOSFET (Metal Oxide)	38 pF	P-Channel	-55 °C	150 °C	1.2 V 4.5 V	20 V	300 mW	SOT-523	500 mA	1 V

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General part information

P-Channel 20 V 500mA (Ta) 300mW (Ta) Surface Mount SOT-523

Technical documentation and resources