MUR40005CT

Obsolete

GeneSiC Semiconductor

DIODE MODULE GP 50V 200A 2TOWER

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Obsolete

GeneSiC Semiconductor

DIODE MODULE GP 50V 200A 2TOWER

Technical Specifications

Parameters and characteristics for this part

Specification	MUR40005CT

Current - Average Rectified (Io) (per Diode)	200 A
Diode Configuration	1 Pair Common Cathode
Mounting Type	Chassis Mount
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	Twin Tower
Reverse Recovery Time (trr)	90 ns
Speed	200 mA, 500 ns
Supplier Device Package	Twin Tower
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	50 V
Voltage - Forward (Vf) (Max) @ If	1.3 V

Part	Technology	Supplier Device Package	Voltage - DC Reverse (Vr) (Max) [Max]	Current - Average Rectified (Io) (per Diode)	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Mounting Type	Voltage - Forward (Vf) (Max) @ If	Reverse Recovery Time (trr)	Speed	Package / Case	Diode Configuration
GeneSiC Semiconductor MUR40005CT	Standard	Twin Tower	50 V	200 A	150 °C	-55 °C	Chassis Mount	1.3 V	90 ns	200 mA 500 ns	Twin Tower	1 Pair Common Cathode

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode Array 1 Pair Common Cathode 50 V 200A Chassis Mount Twin Tower

Technical documentation and resources