1N4586GP-E3/54

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Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 1KV 1A DO204AC

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Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 1KV 1A DO204AC

Technical Specifications

Parameters and characteristics for this part

Specification	1N4586GP-E3/54

Capacitance @ Vr, F	15 pF
Current - Average Rectified (Io)	1 A
Current - Reverse Leakage @ Vr	5 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-65 C
Package / Case	DO-204AC, DO-15, Axial
Reverse Recovery Time (trr)	2 µs
Speed	Standard Recovery >500ns
Speed	200 mA
Supplier Device Package	DO-204AC
Supplier Device Package	DO-15
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	1000 V
Voltage - Forward (Vf) (Max) @ If	1 V

Part	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Voltage - DC Reverse (Vr) (Max) [Max]	Capacitance @ Vr, F	Supplier Device Package	Supplier Device Package	Technology	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Current - Reverse Leakage @ Vr	Speed	Speed	Mounting Type	Reverse Recovery Time (trr)	Package / Case
Vishay General Semiconductor - Diodes Division 1N4586GPHE3/54	175 ░C	-65 C	1000 V	15 pF	DO-204AC	DO-15	Standard	1 A	1 V	5 µA	Standard Recovery >500ns	200 mA	Through Hole	2 µs	Axial DO-15 DO-204AC
Vishay General Semiconductor - Diodes Division 1N4586GP-E3/54	175 ░C	-65 C	1000 V	15 pF	DO-204AC	DO-15	Standard	1 A	1 V	5 µA	Standard Recovery >500ns	200 mA	Through Hole	2 µs	Axial DO-15 DO-204AC

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General part information

Diode 1000 V 1A Through Hole DO-204AC (DO-15)

Technical documentation and resources