CEDM7002AE TR PBFREE

Active

Central Semiconductor Corp

MOSFET N-CH 60V 300MA SOT883L

Search across all available documentation for this part.

Active

Central Semiconductor Corp

MOSFET N-CH 60V 300MA SOT883L

Technical Specifications

Parameters and characteristics for this part

Specification	CEDM7002AE TR PBFREE

Current - Continuous Drain (Id) @ 25°C	300 mA
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	2.5 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	0.5 nC
Input Capacitance (Ciss) (Max) @ Vds	50 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-65 °C
Package / Case	SOT-883, SC-101
Power Dissipation (Max)	100 mW
Rds On (Max) @ Id, Vgs	1.4 Ohm
Supplier Device Package	SOT-853L
Technology	MOSFET (Metal Oxide)
Vgs (Max) [Max]	20 V
Vgs(th) (Max) @ Id	2 V

Part	Operating Temperature [Max]	Operating Temperature [Min]	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On) [Min]	Drive Voltage (Max Rds On, Min Rds On) [Max]	Package / Case	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Mounting Type	Vgs(th) (Max) @ Id	Vgs (Max) [Max]	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Technology
Central Semiconductor Corp CEDM7002AE TR PBFREE	150 °C	-65 °C	60 V	10 V	2.5 V	SC-101 SOT-883	SOT-853L	300 mA	0.5 nC	100 mW	1.4 Ohm	Surface Mount	2 V	20 V	50 pF	N-Channel	MOSFET (Metal Oxide)

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 60 V 300mA (Ta) 100mW (Ta) Surface Mount SOT-883L

Technical documentation and resources