VEC2616-TL-H

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ON Semiconductor

MOSFET N/P-CH 60V 3A/2.5A SOT28

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Unknown

ON Semiconductor

MOSFET N/P-CH 60V 3A/2.5A SOT28

Technical Specifications

Parameters and characteristics for this part

Specification	VEC2616-TL-H

Configuration	N and P-Channel
Current - Continuous Drain (Id) @ 25°C	3 A, 2.5 A
Drain to Source Voltage (Vdss)	60 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs	10 nC
Input Capacitance (Ciss) (Max) @ Vds	505 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Power - Max [Max]	1 W
Rds On (Max) @ Id, Vgs	80 mOhm
Supplier Device Package	SOT-28FL/VEC8
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	2.6 V

Part	Vgs(th) (Max) @ Id	Technology	Mounting Type	Configuration	Supplier Device Package	Operating Temperature	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max [Max]	Current - Continuous Drain (Id) @ 25°C	FET Feature	Drain to Source Voltage (Vdss)
ON Semiconductor VEC2616-TL-W	2.6 V	MOSFET (Metal Oxide)	Surface Mount	N and P-Channel	SOT-28FL/VEC8	150 °C	10 nC	80 mOhm	505 pF	1 W	2.5 A 3 A	4V Drive Logic Level Gate	60 V
ON Semiconductor VEC2616-TL-W-Z	2.6 V	MOSFET (Metal Oxide)	Surface Mount	N and P-Channel	SOT-28FL/VEC8	150 °C	10 nC	80 mOhm	505 pF	1 W	2.5 A 3 A	4V Drive Logic Level Gate	60 V
ON Semiconductor VEC2616-TL-H	2.6 V	MOSFET (Metal Oxide)	Surface Mount	N and P-Channel	SOT-28FL/VEC8	150 °C	10 nC	80 mOhm	505 pF	1 W	2.5 A 3 A	Logic Level Gate	60 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Mosfet Array 60V 3A, 2.5A 1W Surface Mount SOT-28FL/VEC8

Technical documentation and resources

No documents available