2SA1013-O,T6MIBF(J

Obsolete

Toshiba Semiconductor and Storage

TRANS PNP 160V 1A TO92L

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Obsolete

Toshiba Semiconductor and Storage

TRANS PNP 160V 1A TO92L

Technical Specifications

Parameters and characteristics for this part

Specification	2SA1013-O,T6MIBF(J

Current - Collector (Ic) (Max) [Max]	1 A
Current - Collector Cutoff (Max) [Max]	1 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	60
Frequency - Transition	50 MHz
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-92-3 Long Body, TO-226-3
Power - Max [Max]	900 mW
Supplier Device Package	TO-92L
Transistor Type	PNP
Vce Saturation (Max) @ Ib, Ic	1.5 V
Voltage - Collector Emitter Breakdown (Max) [Max]	160 V

Part	Power - Max [Max]	Current - Collector (Ic) (Max) [Max]	Transistor Type	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Voltage - Collector Emitter Breakdown (Max) [Max]	Package / Case	Frequency - Transition	Supplier Device Package	Mounting Type	Current - Collector Cutoff (Max) [Max]	Vce Saturation (Max) @ Ib, Ic	Operating Temperature
Toshiba Semiconductor and Storage 2SA1013-O,T6MIBF(J	900 mW	1 A	PNP	60	160 V	TO-226-3 TO-92-3 Long Body	50 MHz	TO-92L	Through Hole	1 µA	1.5 V	150 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Bipolar (BJT) Transistor PNP 160 V 1 A 50MHz 900 mW Through Hole TO-92L

Technical documentation and resources