SSU1N60BTU-WS

Obsolete

ON Semiconductor

MOSFET N-CH 600V 900MA IPAK

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Obsolete

ON Semiconductor

MOSFET N-CH 600V 900MA IPAK

Technical Specifications

Parameters and characteristics for this part

Specification	SSU1N60BTU-WS

Current - Continuous Drain (Id) @ 25°C	900 mA
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	7.7 nC
Input Capacitance (Ciss) (Max) @ Vds	215 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	IPAK, TO-251-3 Short Leads, TO-251AA
Power Dissipation (Max)	28 W, 2.5 W
Rds On (Max) @ Id, Vgs	12 Ohm
Supplier Device Package	IPAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4 V

Part	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max)	Supplier Device Package	Mounting Type	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Technology	Package / Case	Rds On (Max) @ Id, Vgs	Vgs (Max)	FET Type	Gate Charge (Qg) (Max) @ Vgs
ON Semiconductor SSU1N60BTU-WS	10 V	900 mA	-55 °C	150 °C	2.5 W 28 W	IPAK	Through Hole	4 V	215 pF	600 V	MOSFET (Metal Oxide)	IPAK TO-251-3 Short Leads TO-251AA	12 Ohm	30 V	N-Channel	7.7 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 600 V 900mA (Tc) 2.5W (Ta), 28W (Tc) Through Hole IPAK

Technical documentation and resources