FBS-GAM02P-R-PSE

Active

EPC Space, LLC

IC GATE DRVR HI/LOW SIDE 18SMD

Search across all available documentation for this part.

Active

EPC Space, LLC

IC GATE DRVR HI/LOW SIDE 18SMD

Technical Specifications

Parameters and characteristics for this part

Specification	FBS-GAM02P-R-PSE

Channel Type	Independent
Driven Configuration	High-Side and Low-Side
Gate Type	N-Channel MOSFET
High Side Voltage - Max (Bootstrap) [Max]	100 V
Input Type	Non-Inverting
Logic Voltage - VIL, VIH	2.9 V, 0.8 V
Mounting Type	Surface Mount
Number of Drivers	2
Operating Temperature [Max]	130 °C
Operating Temperature [Min]	-55 °C
Package / Case	18-SMD Module
Rise / Fall Time (Typ) [custom]	22 ns
Rise / Fall Time (Typ) [custom]	35 ns
Supplier Device Package	Module
Voltage - Supply [Max]	50 VDC, 5.5 V
Voltage - Supply [Min]	5 V, 4.5 V

Part	Package / Case	Voltage - Supply [Max]	Voltage - Supply [Min]	Gate Type	Rise / Fall Time (Typ) [custom]	Rise / Fall Time (Typ) [custom]	Operating Temperature [Min]	Operating Temperature [Max]	Number of Drivers	High Side Voltage - Max (Bootstrap) [Max]	Supplier Device Package	Mounting Type	Input Type	Logic Voltage - VIL, VIH	Channel Type	Driven Configuration
EPC Space, LLC FBS-GAM02P-R-PSE	18-SMD Module	5.5 V 50 VDC	4.5 V 5 V	N-Channel MOSFET	22 ns	35 ns	-55 °C	130 °C	2	100 V	Module	Surface Mount	Non-Inverting	0.8 V 2.9 V	Independent	High-Side and Low-Side

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

High-Side and Low-Side Gate Driver IC Non-Inverting Module

Technical documentation and resources