1N5061TAP

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Vishay General Semiconductor - Diodes Division

DIODE AVALANCHE 600V 2A SOD57

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Vishay General Semiconductor - Diodes Division

DIODE AVALANCHE 600V 2A SOD57

Technical Specifications

Parameters and characteristics for this part

Specification	1N5061TAP

Capacitance @ Vr, F	40 pF
Current - Average Rectified (Io)	2 A
Current - Reverse Leakage @ Vr	1 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 C
Package / Case	SOD-57, Axial
Reverse Recovery Time (trr)	4 µs
Speed	Standard Recovery >500ns
Speed	200 mA
Supplier Device Package	SOD-57
Technology	Avalanche
Voltage - DC Reverse (Vr) (Max) [Max]	600 V
Voltage - Forward (Vf) (Max) @ If	1.15 V

Part	Supplier Device Package	Capacitance @ Vr, F	Current - Reverse Leakage @ Vr	Mounting Type	Package / Case	Voltage - DC Reverse (Vr) (Max) [Max]	Technology	Voltage - Forward (Vf) (Max) @ If	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Reverse Recovery Time (trr)	Current - Average Rectified (Io)	Speed	Speed	Supplier Device Package
Vishay General Semiconductor - Diodes Division 1N5061TR	SOD-57	40 pF	1 µA	Through Hole	Axial SOD-57	600 V	Avalanche	1.15 V	175 ░C	-55 C	4 µs	2 A	Standard Recovery >500ns	200 mA
Vishay General Semiconductor - Diodes Division 1N5061GPHE3/54	DO-204AC	15 pF	5 µA	Through Hole	Axial DO-15 DO-204AC	600 V	Standard	1.2 V	175 ░C	-65 C	2 µs	1 A	Standard Recovery >500ns	200 mA	DO-15
Vishay General Semiconductor - Diodes Division 1N5061TAP	SOD-57	40 pF	1 µA	Through Hole	Axial SOD-57	600 V	Avalanche	1.15 V	175 ░C	-55 C	4 µs	2 A	Standard Recovery >500ns	200 mA

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General part information

Diode 600 V 2A Through Hole SOD-57

Technical documentation and resources