PJMD900N60EC_L2_00001

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Panjit International Inc.

600V SUPER JUNCTION MOSFET

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Panjit International Inc.

600V SUPER JUNCTION MOSFET

Technical Specifications

Parameters and characteristics for this part

Specification	PJMD900N60EC_L2_00001

Current - Continuous Drain (Id) @ 25°C	5 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	8.8 nC
Input Capacitance (Ciss) (Max) @ Vds	310 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)	47.5 W
Rds On (Max) @ Id, Vgs [Max]	900 mOhm
Supplier Device Package	TO-252AA
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4 V

Part	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs [Max]	Vgs (Max)	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Technology	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs [Max]	FET Type	Package / Case	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]
Panjit International Inc. PJMD900N60EC_L2_00001	600 V	900 mOhm	30 V	4 V	10 V	MOSFET (Metal Oxide)	47.5 W	310 pF	8.8 nC	N-Channel	DPAK (2 Leads + Tab) SC-63 TO-252-3	5 A	TO-252AA	Surface Mount	-55 °C	150 °C

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General part information

N-Channel 600 V 5A (Tc) 47.5W (Tc) Surface Mount TO-252AA

Technical documentation and resources