KBPC3508W

Active

GeneSiC Semiconductor

BRIDGE RECT 1P 800V 35A KBPC-W

Search across all available documentation for this part.

Active

GeneSiC Semiconductor

BRIDGE RECT 1P 800V 35A KBPC-W

Technical Specifications

Parameters and characteristics for this part

Specification	KBPC3508W

Current - Average Rectified (Io)	35 A
Current - Reverse Leakage @ Vr	5 µA
Diode Type	Single Phase
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	4-Square, KBPC-W
Supplier Device Package	KBPC-W
Technology	Standard
Voltage - Forward (Vf) (Max) @ If	1.1 V
Voltage - Peak Reverse (Max) [Max]	800 V

Part	Current - Reverse Leakage @ Vr	Package / Case	Diode Type	Supplier Device Package	Technology	Mounting Type	Voltage - Forward (Vf) (Max) @ If	Voltage - Peak Reverse (Max) [Max]	Current - Average Rectified (Io)	Operating Temperature [Min]	Operating Temperature [Max]
GeneSiC Semiconductor KBPC3508T	5 µA	4-Square KBPC-T	Single Phase	KBPC	Standard	QC Terminal	1.1 V	800 V	35 A	-55 °C	150 °C
GeneSiC Semiconductor KBPC3508W	5 µA	4-Square KBPC-W	Single Phase	KBPC-W	Standard	Through Hole	1.1 V	800 V	35 A	-55 °C	150 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Bridge Rectifier Single Phase Standard 800 V Through Hole KBPC-W

Technical documentation and resources