2N2913

Obsolete

Central Semiconductor Corp

TRANS 2NPN 30MA 45V TO78-6

Search across all available documentation for this part.

Obsolete

Central Semiconductor Corp

TRANS 2NPN 30MA 45V TO78-6

Technical Specifications

Parameters and characteristics for this part

Specification	2N2913

Current - Collector (Ic) (Max) [Max]	30 mA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	60
Frequency - Transition	60 MHz
Mounting Type	Through Hole
Package / Case	TO-78-6 Metal Can
Power - Max [Max]	600 mW
Supplier Device Package	TO-78-6
Transistor Type	2 NPN (Dual)
Voltage - Collector Emitter Breakdown (Max)	45 V

Part	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Package / Case	Voltage - Collector Emitter Breakdown (Max)	Transistor Type	Current - Collector (Ic) (Max) [Max]	Supplier Device Package	Frequency - Transition	Power - Max [Max]	Mounting Type
Central Semiconductor Corp 2N2916	150	TO-78-6 Metal Can	45 V	2 NPN (Dual)	30 mA	TO-78-6	60 MHz	600 mW	Through Hole
Central Semiconductor Corp 2N2918	150	TO-78-6 Metal Can	45 V	2 NPN (Dual)	30 mA	TO-78-6	60 MHz	600 mW	Through Hole
Central Semiconductor Corp 2N2915	60	TO-78-6 Metal Can	45 V	2 NPN (Dual)	30 mA	TO-78-6	60 MHz	600 mW	Through Hole
Central Semiconductor Corp 2N2913	60	TO-78-6 Metal Can	45 V	2 NPN (Dual)	30 mA	TO-78-6	60 MHz	600 mW	Through Hole
Central Semiconductor Corp 2N2917	60	TO-78-6 Metal Can	45 V	2 NPN (Dual)	30 mA	TO-78-6	60 MHz	600 mW	Through Hole

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Bipolar (BJT) Transistor Array 2 NPN (Dual) 45V 30mA 60MHz 600mW Through Hole TO-78-6

Technical documentation and resources