CAS325M12HM2
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MOSFET 2N-CH 1200V 444A MODULE
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CAS325M12HM2
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MOSFET 2N-CH 1200V 444A MODULE
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Technical Specifications
Parameters and characteristics for this part
| Specification | CAS325M12HM2 |
|---|---|
| Configuration | 2 N-Channel (Half Bridge) |
| Current - Continuous Drain (Id) @ 25°C | 444 A |
| Drain to Source Voltage (Vdss) | 1200 V |
| Drain to Source Voltage (Vdss) | 1.2 kV |
| Gate Charge (Qg) (Max) @ Vgs | 1127 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 19500 pF |
| Operating Temperature | 175 °C |
| Package / Case | Module |
| Power - Max [Max] | 3 kW |
| Rds On (Max) @ Id, Vgs | 4.3 mOhm |
| Supplier Device Package | Module |
| Technology | Silicon Carbide (SiC) |
| Vgs(th) (Max) @ Id | 4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
Description
General part information
CAS325 Series
Mosfet Array 1200V (1.2kV) 444A (Tc) 3000W Module
Documents
Technical documentation and resources
No documents available