DSEI36-06AS-TRL

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IXYS

DIODE GEN PURP 600V 37A TO263AA

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IXYS

DIODE GEN PURP 600V 37A TO263AA

Technical Specifications

Parameters and characteristics for this part

Specification	DSEI36-06AS-TRL

Current - Average Rectified (Io)	37 A
Current - Reverse Leakage @ Vr	100 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-40 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Reverse Recovery Time (trr)	50 ns
Speed	200 mA, 500 ns
Supplier Device Package	TO-263AA
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	600 V
Voltage - Forward (Vf) (Max) @ If	1.6 V

Part	Reverse Recovery Time (trr)	Mounting Type	Voltage - Forward (Vf) (Max) @ If	Current - Reverse Leakage @ Vr	Technology	Voltage - DC Reverse (Vr) (Max) [Max]	Speed	Supplier Device Package	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Current - Average Rectified (Io)	Package / Case
IXYS DSEI36-06AS-TUB	50 ns	Surface Mount	1.6 V	100 µA	Standard	600 V	200 mA 500 ns	TO-263AA	150 °C	-40 °C	37 A	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB
IXYS DSEI36-06AS-TRL	50 ns	Surface Mount	1.6 V	100 µA	Standard	600 V	200 mA 500 ns	TO-263AA	150 °C	-40 °C	37 A	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 600 V 37A Surface Mount TO-263AA

Technical documentation and resources