FDM47-06KC5

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IXYS

MOSFET N-CH 600V 47A I4PAC

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IXYS

MOSFET N-CH 600V 47A I4PAC

Technical Specifications

Parameters and characteristics for this part

Specification	FDM47-06KC5

Current - Continuous Drain (Id) @ 25°C	47 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	190 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	6800 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	ISOPLUSi5-Pak™
Rds On (Max) @ Id, Vgs	45 mOhm
Supplier Device Package	ISOPLUS i4-PAC™
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.5 V

Part	Rds On (Max) @ Id, Vgs	FET Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Drain to Source Voltage (Vdss)	Vgs (Max)	Technology	Input Capacitance (Ciss) (Max) @ Vds [Max]	Vgs(th) (Max) @ Id	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]
IXYS FDM47-06KC5	45 mOhm	N-Channel	190 nC	600 V	20 V	MOSFET (Metal Oxide)	6800 pF	3.5 V	ISOPLUSi5-Pak™	10 V	47 A	ISOPLUS i4-PAC™	Through Hole	-55 °C	150 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 600 V 47A (Tc) Through Hole ISOPLUS i4-PAC™

Technical documentation and resources

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