SP8K3TB1

Obsolete

Rohm Semiconductor

MOSFET 2N-CH 30V 7A 8SOP

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Obsolete

Rohm Semiconductor

MOSFET 2N-CH 30V 7A 8SOP

Technical Specifications

Parameters and characteristics for this part

Specification	SP8K3TB1

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	7 A
Drain to Source Voltage (Vdss)	30 V
FET Feature	4V Drive, Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs [Max]	11.8 nC
Input Capacitance (Ciss) (Max) @ Vds	600 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Power - Max [Max]	2 W
Rds On (Max) @ Id, Vgs [Max]	24 mOhm
Supplier Device Package	8-SOP
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id [Max]	2.5 V

Part	Vgs(th) (Max) @ Id [Max]	Current - Continuous Drain (Id) @ 25°C	Configuration	Package / Case	Package / Case [y]	Package / Case [x]	Mounting Type	Power - Max [Max]	FET Feature	Operating Temperature	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds	Technology	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs [Max]	Supplier Device Package
Rohm Semiconductor SP8K3TB1	2.5 V	7 A	2 N-Channel (Dual)	8-SOIC	3.9 mm	0.154 in	Surface Mount	2 W	4V Drive Logic Level Gate	150 °C	11.8 nC	600 pF	MOSFET (Metal Oxide)	30 V	24 mOhm	8-SOP

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Mosfet Array 30V 7A (Ta) 2W (Ta) Surface Mount 8-SOP

Technical documentation and resources

No documents available