2N5770_D26Z

Obsolete

ON Semiconductor

RF TRANS NPN 15V TO92-3

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Obsolete

ON Semiconductor

RF TRANS NPN 15V TO92-3

Technical Specifications

Parameters and characteristics for this part

Specification	2N5770_D26Z

Current - Collector (Ic) (Max) [Max]	50 mA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	50
Gain	15 dB
Mounting Type	Through Hole
Noise Figure (dB Typ @ f)	6 dB
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-226-3, TO-92-3
Power - Max [Max]	350 mW
Supplier Device Package	TO-92-3
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	15 V

Part	Mounting Type	Power - Max [Max]	Transistor Type	Voltage - Collector Emitter Breakdown (Max)	Noise Figure (dB Typ @ f)	Current - Collector (Ic) (Max) [Max]	Package / Case	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Supplier Device Package	Gain	Operating Temperature [Min]	Operating Temperature [Max]
ON Semiconductor 2N5770_D26Z	Through Hole	350 mW	NPN	15 V	6 dB	50 mA	TO-226-3 TO-92-3	50	TO-92-3	15 dB	-55 °C	150 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

RF Transistor NPN 15V 50mA 350mW Through Hole TO-92-3

Technical documentation and resources